Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region

具有沿着晶体管单元区的过渡区中的晶体管单元和超结结构的半导体器件

Abstract

The invention relates to a semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region. A semiconductor device includes a transistor cell region (610) and a transition region (650). The transistor cell region (610) includes a first portion of a super junction structure (180) and a first contact structure (315) electrically connecting a first load electrode (310) with first source zones (650) of transistor cells (TC). The first source zones (111) are formed on opposite sides of the first contact structure (315). The transition region (650) directly adjoins to the transistor cell region (610) and includes a second portion of the super junction structure (180) and a second contact structure (316) electrically connecting the first load electrode (310) with a second source zone (112). The second source zone (112) is formed only at a side of the second contact structure (316) oriented to the transistor cell region (610).
本发明涉及具有沿着晶体管单元区的过渡区中的晶体管单元和超结结构的半导体器件。半导体器件包括晶体管单元区(610)和过渡区(650)。晶体管单元区(610)包括超结结构(180)的第一部分和电连接第一负载电极(310)与晶体管单元(TC)的第一源极区段(111)的第一接触结构(315)。所述第一源极区段(111)形成在第一接触结构(315)的相对侧上。过渡区(650)直接邻接于晶体管单元区(610)并包括超结结构(180)的第二部分和电连接所述第一负载电极(310)与第二源极区段(112)的第二接触结构(316)。第二源极区段(316)仅在被定向到所述晶体管单元区(610)的第二接触结构(316)的侧面处形成。

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle